| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad which can fully improve both peripheral sag and surface roughness, and a semiconductor wafer polished by the polishing pad. <P>SOLUTION: The polishing pad 10 has a polishing layer 12 whose surface 14 is brought into pressure contact with a material 24 to be polished, wherein the polishing layer 12 is formed of polyurethane foam containing a plurality of air bubbles. The plurality of air bubbles contain 90% or more of air bubbles (closed cells 16) formed by internal spaces of the air bubbles spatially separating from one another. <P>COPYRIGHT: (C)2012,JPO&INPIT |
