| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of attaining high output while preventing deterioration in crystallinity of a luminous layer and deterioration in crystallinity of a p-type semiconductor layer due to inclusion of impurities into the p-type semiconductor layer, and a method for manufacturing the semiconductor light emitting element. <P>SOLUTION: A method for manufacturing a semiconductor light emitting element includes: a first step of forming, on a substrate 11, first and second n-type semiconductor layers 12a and 12b, and a luminous layer 13 formed by alternately and repeatedly laminating a well layer and a barrier layer while the uppermost surface is the barrier layer, in a first metal organic chemical vapor deposition system; and a second step of sequentially laminating a regrowth layer 13c of the barrier layer and a p-type semiconductor layer 14 on the barrier layer of the uppermost face of the luminous layer in a second metal organic chemical vapor deposition system. <P>COPYRIGHT: (C)2012,JPO&INPIT |
