| 发明名称 |
COMPOSITION FOR ADVANCED NODE FRONT-AND BACK-END OF LINE CHEMICAL MECHANICAL POLISHING |
| 摘要 |
The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates. |
| 申请公布号 |
US2012003901(A1) |
申请公布日期 |
2012.01.05 |
| 申请号 |
US20100828766 |
申请日期 |
2010.07.01 |
| 申请人 |
HU BIN;SINGH ABHISHEK;MOYAERTS GERT;MAHULIKAR DEEPAK;WEN RICHARD;PLANAR SOLUTIONS, LLC |
发明人 |
HU BIN;SINGH ABHISHEK;MOYAERTS GERT;MAHULIKAR DEEPAK;WEN RICHARD |
| 分类号 |
B24B1/00;C09K13/00;C09K13/04 |
主分类号 |
B24B1/00 |
| 代理机构 |
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