SEMICONDUCTOR DEVICE

摘要

In order to more stably form an ohmic junction between an electrode and a semiconductor layer, and to be able to decrease the electrical contact resistance therebetween, the disclosed semiconductor device is provided with: a semiconductor layer (103) comprising an oxide semiconductor material containing indium; an ohmic electrode (107) that has an ohmic junction with said semiconductor layer (103); and an intermediate layer (106) provided between the semiconductor layer (103) and the ohmic electrode (107). The intermediate layer (106) has: a first region (106a) that has a greater concentration of indium atoms than the inside of the semiconductor layer (103); and a second region (106b) that has a smaller concentration of indium atoms than the first region (106a) does.