SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a semiconductor substrate (120), wherein the semiconductor substrate (120) is located on an insulating layer (100); an insulating substrate (124), wherein the insulating substrate (124) is located on the insulating layer (100) and embedded in the semiconductor substrate (120), and the insulating substrate (124) has stress exerting upon the semiconductor substrate (120). A method for forming a semiconductor device includes: forming a semiconductor substrate (204) on an insulating layer (202); forming a cavity (300) within the semiconductor substrate (204), wherein the cavity (300) exposes the insulating layer (202); and forming an insulating substrate (320) in the cavity (300), wherein the insulating substrate (320) has stress exerting upon the semiconductor substrate (204). The semiconductor device can reduce short channel effect, source and drain resistance and parasitic capacitance.