| 摘要 |
<p>Disclosed is a solid state imaging device with high color reproducibility and high sensitivity and which comprises a plurality of pixel cells and a vertical signal line. The pixel cells have a photoelectric conversion film (26), a pixel electrode (27), a transparent electrode (25), an amplifying transistor, a reset transistor, and an address transistor. The solid state imaging device also comprises a low refractive index transparent layer (2) formed on top of the transparent electrode (25), and a plurality of high refractive index transparent sections (21a, 21b, 21c) that have a higher refractive index than the low refractive index transparent layer (2) and which are embedded within the low refractive index transparent layer (2). The high refractive index transparent sections (21a, 21b, 21c) separate incident light that enters the high refractive transparent sections (21a, 21b, 21c) into a 0-th order diffracted light, a 1st order diffracted light, and a -1st order diffracted light, and emit said diffracted light to the photoelectric conversion film (26).</p> |
