METHOD FOR FORMING IMPURITY REGION OF VERTICAL TRANSISTOR AND METHOD FOR FABRICATING VERTICAL TRANSISTOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for forming impurity region of a vertical transistor enabling precise control of a position and a concentration of impurity and method for fabricating a vertical transistor using the same.

SOLUTION: The method includes forming an impurity ion junction region within a lower portion of a semiconductor substrate by ion injection to the semiconductor substrate, and forming a trench by etching the semiconductor substrate. The etching process is performed to remove a portion of the impurity ion junction region, so that a remaining portion of the impurity ion junction region is exposed to a lower side portion of the trench to serve as a buried bit line junction region.

COPYRIGHT: (C)2012,JPO&INPIT