| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a trench structure with high withstand voltage, and a manufacturing method thereof. <P>SOLUTION: The semiconductor device includes a conductive layer 17 formed via an insulator film 16 in a trench 21 formed in a semiconductor substrate 11. An opening 18 of the trench 21 has a curved surface of a folding-fan shape extending from a side wall 21c of the trench 21 to a surface 11a of the semiconductor substrate 11 to which a plurality of dents 22 and 23 are connected. <P>COPYRIGHT: (C)2012,JPO&INPIT |
