| 摘要 |
A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion. |
