| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high efficiency CIS-based thin film solar cell by improving fill factor (FF) without increasing series resistance. <P>SOLUTION: A CIS-based thin film solar cell includes a structure in which a CIS-based light absorption layer 13, a buffer layer 14, and a transparent conductive film 15 are laminated in this order. The buffer layer 14 has a three-layer lamination structure in which a first buffer layer 141, a second buffer layer 142, and a third buffer layer 143 are laminated in this order. The first buffer layer 141 is made of ZnS having thickness of 1 to 3 nm. The second buffer layer 142 is made of a thin film having thickness of 20 nm or less, a composition of which continuously changes from ZnO to ZnS in a direction from the CIS-based light absorption layer 13 to the transparent conductive film 15. The third buffer layer 143 is made of ZnO having thickness of 100 nm or more. <P>COPYRIGHT: (C)2012,JPO&INPIT |
