发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To facilitate filling of an underfill material without fear of causing failure of a device. <P>SOLUTION: In a method of manufacturing a semiconductor device, a coating layer 15 which exhibits an affinity for a filler 16 to be filled into a space between first and second bases 11 and 12 is formed on at least one of the surfaces of the first and second bases 11 and 12 facing each other, and the filler 16 is then filled into the space between the first and second bases 11 and 12. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012004329(A) 申请公布日期 2012.01.05
申请号 JP20100137879 申请日期 2010.06.17
申请人 ELPIDA MEMORY INC 发明人 OIDE HIROYUKI
分类号 H01L21/56;H01L23/29;H01L23/31;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/56
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