发明名称 TEXTURING AND DAMAGE ETCH OF SILICON SINGLE CRYSTAL (100) SUBSTRATES
摘要 Methods for texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Texturizing of the wafer surface is carried out with a TMAH based solution. The texturizing solution may further include isopropyl alcohol and ethylene glycol at different dilutions in DI water to further improves results.
申请公布号 WO2011094127(A3) 申请公布日期 2012.01.05
申请号 WO2011US22034 申请日期 2011.01.21
申请人 ASIA UNION ELECTRONIC CHEMICAL CORPORATION;DOVE, CURTIS;BAUER, GREG;BALOOCH, MEHDI 发明人 DOVE, CURTIS;BAUER, GREG;BALOOCH, MEHDI
分类号 H01L31/0236;H01L21/302 主分类号 H01L31/0236
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