发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate.
申请公布号 US2012001200(A1) 申请公布日期 2012.01.05
申请号 US201113220054 申请日期 2011.08.29
申请人 IKOSHI AYANORI;UEMOTO YASUHIRO;YANAGIHARA MANABU;MORITA TATSUO;PANASONIC CORPORATION 发明人 IKOSHI AYANORI;UEMOTO YASUHIRO;YANAGIHARA MANABU;MORITA TATSUO
分类号 H01L29/161;H01L23/48 主分类号 H01L29/161
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