INSULATING LAYER MATERIAL FOR ORGANIC THIN-FILM TRANSISTOR, AND ORGANIC THIN-FILM TRANSISTOR

摘要

The present invention addresses the problem of providing an insulating layer material for organic thin-film transistors that enables the manufacture of organic thin-film transistors exhibiting little hysteresis and a threshold voltage having a low absolute value. In order to address the problem, an insulating layer material for organic thin-film transistors contains: a polymeric compound (A) having a repeating unit having a cyclic carbonate ester, and a repeating unit having a first functional group that, under the action of heat or electromagnetic radiation, generates a second functional group that reacts with active hydrogen; and an active hydrogen compound (B).