| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that has two ohmic electrodes and a gate electrode disposed therebetween, and can be manufactured without any defect in gate electrode formation due to fluctuations of an electron beam for the gate electrode formation. <P>SOLUTION: As the ohmic electrode (source electrode 14s) closer to the gate electrode 20 of the semiconductor device 1, a rectangular ohmic electrode is employed such that at least one corner on the side opposed to the gate electrode 20 (a corner on the side of a drawing start position for the electron beam) is cut. <P>COPYRIGHT: (C)2012,JPO&INPIT |
