| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that has excellent electric characteristics while preventing reliability from being lost. <P>SOLUTION: A method of manufacturing the semiconductor device includes the processes of: forming an insulation film 42 including silicon, oxygen and carbon by a chemical vapor-phase deposition method on a semiconductor substrate 10; carrying out ultraviolet curing on the insulation film while heating it at a temperature equal to or lower than 350°C after the process of forming the insulation film; and performing helium plasma processing on the insulation film after the process of the ultraviolet curing. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012004401(A) |
申请公布日期 |
2012.01.05 |
| 申请号 |
JP20100139018 |
申请日期 |
2010.06.18 |
| 申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
OKURA YOSHIYUKI;MORI TOSHIKI |
| 分类号 |
H01L21/316;C23C16/42;H01L21/205;H01L21/768;H01L23/522 |
主分类号 |
H01L21/316 |
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