| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which manufacturing process is simplified and variation in electric characteristics is reduced. <P>SOLUTION: Metal particles 13 which promote crystallization are sprayed onto the surface of an insulating film 12 so that the density becomes uniform. The metal particles 13 exposed on the bottom of a pore 16 react on an amorphous silicon film 20 on the periphery thereof to cause solid phase growth of polycrystal silicon 21 in the pore 16. Subsequently, the amorphous silicon film 20 on an insulating film 14 is irradiated with a laser beam and melted, and liquid phase growth of molten silicon is performed using grains of the polycrystal silicon 21 appearing at the opening of the pore 16 as seed crystal thus forming a pseudo-single crystal silicon film 23 having the pore 16 as an origin. A TFT 10 having the pseudo-single crystal silicon film 23 as an active layer 28 is manufactured. <P>COPYRIGHT: (C)2012,JPO&INPIT |
