| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide means allowing selection and determination of an accurate and advantageous drive system by evaluating different drive systems at the same time. <P>SOLUTION: A semiconductor memory device comprises: a first memory cell 102 which includes a first selection transistor Q0 having a first diffusion layer and a second diffusion layer, and a first storage element Cs0 having an electrode connected to the first diffusion layer and capable of holding data; a first bit line BL0 connected to the second diffusion layer of the first selection transistor Q0; a word line WL0 connected to a first gate electrode; a first sense amplifier SA1 having a first differential node N0 connected to the first bit line BL0, which sets the potential of the first bit line BL0 at a low level or high level; and a second sense amplifier SA2 which includes a first transistor having a gate electrode connected to the first bit line BL0 and an output node for outputting a signal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
