| 摘要 |
An electrode is prevented from being peeled from a substrate or a silicon layer. After the surface of a first copper thin film composed mainly of copper is treated by exposing it to an ammonia gas, a film of silicon nitride is formed on the surface of the first copper thin film by generating a plasma of a raw material gas containing a silane gas and an ammonia gas in an atmosphere in which an object to be processed is placed. Since the surface is preliminarily treated with the ammonia gas, the silane gas is prevented from being diffused into the first copper thin film. Therefore, an electrode constituted by the surface-treated first copper thin film is not peeled from the glass substrate or the silicon layer. In addition, its electric resistance value does not rise. |
