发明名称 |
METHOD FOR MANUFACTURING PHOTO MASK, AND PHOTO MASK |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a photo mask with higher accuracy compared with the case that a photomask blank having a conventional light shielding film is used in an etching process of a light shielding film, by reducing pattern size variance caused by density dependency of patterns to be formed. <P>SOLUTION: A photo mask is manufactured from a photomask blank having a light shielding film laminated with or without another film on a transparent substrate and composed of a metal or a metallic compound capable of being etched by fluorine-based dry etching; an anti-reflection film formed on the light shielding film and composed of a metal or a metallic compound capable of being etched by fluorine-based dry etching; and an etching mask film with a film thickness of 2 to 30 nm formed on the anti-reflection film and composed of a metal or a metallic compound which has resistance to the fluorine-based dry etching. A manufacturing method of the photomask includes resist patterning, chlorine-based dry etching, and fluorine-based dry etching. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012003287(A) |
申请公布日期 |
2012.01.05 |
申请号 |
JP20110205807 |
申请日期 |
2011.09.21 |
申请人 |
SHIN ETSU CHEM CO LTD;TOPPAN PRINTING CO LTD |
发明人 |
YOSHIKAWA HIROKI;INAZUKI SADAOMI;OKAZAKI SATOSHI;HARAGUCHI TAKASHI;SAGA TADASHI;KOJIMA YOSUKE;CHIBA KAZUAKI;FUKUSHIMA YUICHI |
分类号 |
G03F1/54;G03F1/46;H01L21/3065 |
主分类号 |
G03F1/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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