MANUFACTURING METHOD OF SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of an oxide semiconductor film with less variation in electrical characteristics and provide a manufacturing method of a semiconductor device including the oxide semiconductor film with less variation in electrical characteristics.

SOLUTION: An oxide semiconductor layer having a light-transmitting property is patterned in a manner that a layer for preventing the transmission of light is disposed lower than a photoresist layer so that light does not reach a substrate stage, thereby reducing the scattered light from the substrate stage or reducing the light incidence due to the reflection on the substrate stage. A semiconductor device may be further manufactured using the oxide semiconductor layer formed by the above patterning method.

COPYRIGHT: (C)2012,JPO&INPIT