| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory in which contact resistance between a lower electrode and a lower layer can be reduced and good switching characteristics can be obtained. <P>SOLUTION: A memory comprises a lower electrode 13 formed separately for each memory cell, a storage layer 14 formed on the lower electrode 13 and capable of recording information according to variations in a resistance value, an upper electrode 15 formed on the storage layer 14, the lower electrode 13 being configured such that a first layer 17 including metal and a second layer 18 including metal nitride and formed on the first layer 17 are laminated where only the first layer 17 is contact with a lower layer and only the second layer 18 is contact with the storage layer 14 as an upper layer, the storage layer 14 being formed commonly for a plurality of memory cells, and the upper electrode 15 being formed commonly for the plurality of memory cells. <P>COPYRIGHT: (C)2012,JPO&INPIT |
