发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT, LASER MODULE, AND OPTICAL TRANSMISSION APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor optical element which improves the characteristics of a semiconductor optical element with a buried hetero structure by providing a structure capable of reducing parasitic capacitance, and to provide a laser module and an optical transmission apparatus. <P>SOLUTION: The invention relates to a method for manufacturing the semiconductor optical element that has a modulator portion for modulating and emitting light input along an emitting direction. The modulator portion includes: a quantum well layer containing aluminum; a semiconductor multi-layer having a mesa-stripe structure; and a semiconductor buried layer which is disposed on both sides of the semiconductor multi-layer and adjacent to them, and in which impurities are added. The method comprises: the step of forming the mesa-stripe structure by removing a predetermined area from the semiconductor multi-layer; the step of cleaning both surfaces of the semiconductor multi-layer by use of chlorine gas; and the step of forming the semiconductor buried layers on both sides of the semiconductor multi-layer, in this order. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012002929(A) |
申请公布日期 |
2012.01.05 |
申请号 |
JP20100136220 |
申请日期 |
2010.06.15 |
申请人 |
OPNEXT JAPAN INC |
发明人 |
SASADA NORIKO;NAOE KAZUHIKO;SAKAI MIO |
分类号 |
G02F1/017;H01S5/026;H01S5/227;H01S5/323 |
主分类号 |
G02F1/017 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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