| 摘要 |
<P>PROBLEM TO BE SOLVED: To integrate a heterojunction diode and an insulated gate type transistor while maintaining excellent electric characteristics of the heterojunction diode. <P>SOLUTION: A drift region 2 is formed on a semiconductor substrate 1. A well region 3 is formed in the drift region 2, and a part of the well region exposes on a primary surface SF of the drift region 2. A source region 4 is formed in the well region 3, and a part of the source region exposes on the primary surface SF of the drift region 2. A junction layer 21 is composed of a source contact region that is ohmic-connected to the well region 3 and the source region 4 exposing on the primary surface SF, and includes a hetero semiconductor; and an anode electrode region composed of the hetero semiconductor that is hetero-joined to the drift region 2 exposing on the primary surface SF. The hetero semiconductor has a narrower band gap than that of the semiconductor substrate 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
