发明名称 |
MOLYBDENUM CONTAINING TARGETS |
摘要 |
The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element. |
申请公布号 |
WO2012002970(A1) |
申请公布日期 |
2012.01.05 |
申请号 |
WO2010US40772 |
申请日期 |
2010.07.01 |
申请人 |
H.C. STARCK, INC.;ROZAK, GARY, ALAN;GAYDOS, MARK, E.;HOGAN, PATRICK, ALAN;SUN, SHUWEI |
发明人 |
ROZAK, GARY, ALAN;GAYDOS, MARK, E.;HOGAN, PATRICK, ALAN;SUN, SHUWEI |
分类号 |
C23C14/34;B22F3/00;C22C27/04 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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