NON-VOLATILE MEMORY DEVICE AND DRIVE METHOD THEREFOR

摘要

Disclosed is a drive method for a non-volatile memory device, which includes: a step (S101) for detecting a surplus low resistance cell in a plurality of memory cells (11); a step (S103) for changing the resistance value of a load resistance (121) to a second resistance value which is lower than a first resistance value; and a step (S104) for setting a variable resistance element (105) included in the surplus low resistance cell to a second high resistance state in which the resistance value is higher than that of a first low resistance state, by applying a voltage pulse to a series circuit constructed from the surplus low resistance cell and the load resistance (121) having the second resistance value.