ETCHING METHOD AND DEVICE

摘要

Disclosed is an etching method that can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed to a substrate. The etching method is provided with: a first etching step for exposing the insulating film (222) to process gas that has been turned into a plasma, partly etching the insulating film (222) in the direction of thickness; a deposited material elimination step for exposing the insulating film (222) remaining after completion of the first etching step to oxygen plasma, eliminating deposited material deposited on the surface of the remaining insulating film (222); and a second etching step for exposing the remaining insulating film (222) to process gas that has been turned into a plasma, etching the remaining insulating film (222).