| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, which can improve the controllability of the density distribution of plasma in a processing space while preventing the erosion of an upper electrode. <P>SOLUTION: A substrate processing apparatus 10 for performing a plasma etching process on a wafer W using plasma includes: a susceptor 12 to put a wafer W thereon, which is connected with a first RF power source 18; an upper electrode plate 28 disposed opposite to the susceptor 12; and a processing space PS located between the susceptor 12 and the upper electrode plate 28. The substrate processing apparatus 10 includes a dielectric plate 27 covering a part of the upper electrode plate 28 facing the processing space PS. The upper electrode plate 28 is divided into an inside electrode 28a arranged opposite to a central portion of the wafer W, and an outside electrode 28b arranged opposite to a peripheral portion of the wafer W. The inside electrode 28a and the outside electrode 28b are electrically insulated from each other. A second variable DC power source 33 applies a positive DC voltage to the inside electrode 28a, whereas the outside electrode 28b is electrically grounded. <P>COPYRIGHT: (C)2012,JPO&INPIT |
