METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which electrical characteristics can be measured with high precision.

SOLUTION: A method of manufacturing a semiconductor device of the present invention includes the successive steps of: forming a protective film 22 on a rear surface 10b of a substrate 10, the protective film 22 composed of an insulator and having a thickness of 1 μm or less; growing a GaN-based semiconductor layer on a front surface 10a of the substrate 10 using metal organic chemical vapor deposition (MOCVD) technique; and measuring electrical characteristics of the GaN-based semiconductor layer.

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