发明名称 POWER SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a power semiconductor device that allows characteristics of a semi-insulating film to be easily measured. <P>SOLUTION: The power semiconductor device comprises: a substrate; a surface electrode formed on the substrate; a plurality of guard rings formed in the substrate so as to surround the surface electrode; a plurality of conductors formed for each of the plurality of guard rings; a semi-insulating film integrally covering the plurality of conductors; and an electrical conductivity monitor formed at a more outer peripheral side than the guard rings in the substrate. The electrical conductivity monitor measures the electrical conductivity of a semi-insulating film for measurement formed from the same material as the semi-insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012004428(A) 申请公布日期 2012.01.05
申请号 JP20100139484 申请日期 2010.06.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUEKAWA EISUKE
分类号 H01L29/739;H01L27/04;H01L29/06;H01L29/78 主分类号 H01L29/739
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