| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of evaluating the cleanness of an apparatus used for semiconductor manufacturing, that allows analysis to be performed simply and locally with high sensitivity. <P>SOLUTION: A method of evaluating the cleanness of a CVD furnace used for forming a film on a substrate comprises at least forming a film on a substrate in a CVD furnace, annealing the substrate in a non-oxidizing atmosphere after the film formation, and observing the number and distribution of particles of foreign substances on the annealed substrate, thereby performing the evaluation on the cleanness of the CVD furnace. <P>COPYRIGHT: (C)2012,JPO&INPIT |
