| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing occurrence of a short circuit, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device comprises: a semiconductor substrate; a pair of impurity diffusion regions provided at the predetermined interval on the semiconductor substrate; a gate insulating film formed on the semiconductor substrate; a gate electrode formed on the gate insulating film; a pair of insulated sidewall spacers covering the both side surfaces of the gate electrode and the both side surfaces of the gate insulating film; and a silicide metal film formed on the top surface of the gate electrode. Each of the sidewall spacers includes an upper sidewall spacer and a lower sidewall spacer that are stacked above and below. <P>COPYRIGHT: (C)2012,JPO&INPIT |
