| 摘要 |
[PROBLEMS] To provide a method for producing a semiconductor porcelain composition which can shift the Currie temperature to the positive direction without the use of Pb and can produce a semiconductor porcelain composition being markedly reduced in the resistivity at room temperature, and a method for producing a semiconductor porcelain composition which can impart uniform characteristics also to the interior of a material with no complicated heat treatment even if the material has a shape of a relatively great thickness. [MEANS FOR SOLVING PROBLEMS] A method for producing a semiconductor porcelain composition which has an empirical formula represented by [(Bi 0.5 Na 0.5 ) x (Ba 1-y R y ) 1-x ]TiO 3 (where R is at least one of La, Dy, Eu, Gd and Y), where x and y satisfy 0 < x ‰¦ 0.14 and 0.002 < y ‰¦ 0.02, and wherein the sintering of the composition is carried out in an inert gas atmosphere having an oxygen concentration of 1% or less, and thereby, the resistivity at room temperature can be remarkably reduced and uniform characteristics can be imparted also to the interior of the resultant material. |
