Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device

摘要

Methods for forming a conductive oxide layer 14 on a substrate 12 are provided. The method can include sputtering a transparent conductive oxide layer ("TCO layer") 14 on a substrate 12 from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C to about 700° C. The method of forming the TCO layer 14 can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device 10, further including forming a cadmium sulfide layer 18 over the transparent conductive oxide layer 14 and forming a cadmium telluride layer 20 over the cadmium sulfide layer 18.