Vertical power semiconductor device and method of making the same

摘要

A power MOSFET (400) includes a semiconductor substrate (402) having a drift region (404) therein and a transition region (424) that extends between the drift region and a first surface (402a) of the semiconductor substrate. The transition region has a vertically retrograded doping profile therein that peaks at a first depth relative to the first surface. First and second base shielding regions (412) extending laterally towards each other to constrict a neck of the upper portion of the transition region are moreover provided under respective first and second base regions (414) to deplete the transition region.