METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A method for manufacturing a semiconductor device, a substrate processing method, and a substrate processing apparatus are provided to form an insulation layer with high thickness uniformity of a film and reduce hydrogen density of the film. CONSTITUTION: Source gas including preset elements is supplied to a process container with a substrate. The source gas is supplied to the substrate through a nozzle installed on the side of the substrate. A preset element containing layer is formed on the substrate. The preset element containing layer is changed into a nitrification layer by supplying nitrogen-containing gas to the process container. The nitrification layer with a preset film thickness is formed on the substrate by supplying inactive gas to the process container.