发明名称 Adhesion layer between electrode and insulating layer for a semiconductor element and corresponding fabrication method
摘要 A semiconductor element includes a semiconductor layer (20), an electrode (30), an adhesion layer (40), and an insulating layer (60). The electrode is disposed over the semiconductor layer and has a first upper surface (32a,32b) and a second upper surface (34a,34b) disposed further away from the semiconductor layer than the first upper surface. The adhesion layer is disposed on the first upper surface of the electrode so that the second upper surface of the electrode is disposed further away from the semiconductor layer than an upper surface of the adhesion layer. The insulating layer covers the upper surface of the adhesion layer and the semiconductor layer.
申请公布号 EP2403024(A2) 申请公布日期 2012.01.04
申请号 EP20110171908 申请日期 2011.06.29
申请人 NICHIA CORPORATION 发明人 EMURA, KEIJI;INOUE, FUMIHIRO
分类号 H01L33/40;H01L23/00;H01L23/31;H01L33/38;H01L33/44 主分类号 H01L33/40
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