GALLIUM NITRIDE SINGLE CRYSTAL GROWING METHOD,申请号EP20050728649-传众专利搜索

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发明名称	GALLIUM NITRIDE SINGLE CRYSTAL GROWING METHOD
摘要
申请公布号	EP1734158(B1)	申请公布日期	2012.01.04
申请号	EP20050728649	申请日期	2005.03.30
申请人	NGK INSULATORS, LTD.	发明人	IWAI, MAKOTO;IMAI, KATSUHIRO;IMAEDA, MINORU
分类号	C30B29/38;C30B9/00;C30B9/10	主分类号	C30B29/38
代理机构		代理人
主权项
地址

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