SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve signal and data transfer rates by reducing parasitic capacitance between silicon penetrating via contact and a semiconductor substrate. CONSTITUTION: A first circuit pattern(12) is formed on a substrate(10). An inter-layer insulating film(14) comprises a penetration hole which passes through from the upper side to the inner side of the substrate. An insulating film structure(18) is consecutively formed along the sidewall and bottom surface of the penetration hole, and the upper side of the inter-layer insulating film. Silicon penetrating via contact(24) is included inside the penetration hole. A buffer layer(26) covers the silicon penetrating via contact and the upper side of the insulating film structure.