Thin film removal apparatus

摘要

A radiation part 40 is moved relative to a holding unit 10 while radiating a laser beam 40a. A suction part 50, together with the radiation part 40, is moved relative to the holding unit 10 while the positional relationship between the suction part 50 and the radiation part 40 is maintained. Thereby, the laser beam 40a radiated from the radiation part 40 is incident on an insulating substrate 5 from the lower side of the insulating substrate 5, and reaches the film 6 formed on the insulating substrate 5. A component material of the film 6 removed from the insulating substrate 5 by the laser beam 40a is, after the removal, quickly sucked by the suction part 50 provided directly above the radiation part 40.