发明名称 |
Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method |
摘要 |
A memory device includes a diode driver and a data storage element, such as an element comprising phase change memory material, and in which the diode driver comprises a silicide element on a silicon substrate with a single crystal silicon node on the silicide element. The silicide element separates the single crystal silicon node from the underlying silicon substrate, preventing the flow of carriers from the single crystal silicon node into the substrate, and is capable of acting as a conductive element for interconnecting devices on the device. The single crystal silicon node acts as one terminal of a diode, and a second semiconductor node is formed on top of it, acting as the other terminal of the diode. |
申请公布号 |
US8089137(B2) |
申请公布日期 |
2012.01.03 |
申请号 |
US20090349874 |
申请日期 |
2009.01.07 |
申请人 |
LUNG HSIANG-LAN;LAI ERH-KUN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN;LAI ERH-KUN |
分类号 |
H01L27/10;H01L21/324;H01L29/861 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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