发明名称 Image sensor with global shutter and in pixel storage transistor
摘要 An image sensor includes a photodiode to accumulate an image charge and a storage transistor to store the image charge. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge to a readout node and a reset transistor is coupled to the readout node. A controller is configured to apply a negative voltage to a gate of the storage transistor before activating the gate of the storage transistor to store the image charge.
申请公布号 US8089036(B2) 申请公布日期 2012.01.03
申请号 US20090433598 申请日期 2009.04.30
申请人 MANABE SOHEI;OMNIVISION TECHNOLOGIES, INC. 发明人 MANABE SOHEI
分类号 H01L27/00;H01J40/14 主分类号 H01L27/00
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