发明名称 |
Integrated circuit using FinFETs and having a static random access memory (SRAM) |
摘要 |
An integrated circuit includes a logic circuit and a memory cell. The logic circuit includes a P-channel transistor, and the memory cell includes a P-channel transistor. The P-channel transistor of the logic circuit includes a channel region. The channel region has a portion located along a sidewall of a semiconductor structure having a surface orientation of (110). The portion of the channel region located along the sidewall has a first vertical dimension that is greater than a vertical dimension of any portion of the channel region of the P-channel transistor of the memory cell located along a sidewall of a semiconductor structure having a surface orientation of (110). |
申请公布号 |
US8088657(B2) |
申请公布日期 |
2012.01.03 |
申请号 |
US20100785829 |
申请日期 |
2010.05.24 |
申请人 |
BURNETT JAMES D.;MATHEW LEO;MIN BYOUNG W.;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
BURNETT JAMES D.;MATHEW LEO;MIN BYOUNG W. |
分类号 |
H01L21/8244;H01L29/78 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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