发明名称 |
Magnetic memory with phonon glass electron crystal material |
摘要 |
A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.
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申请公布号 |
US8089132(B2) |
申请公布日期 |
2012.01.03 |
申请号 |
US20090423119 |
申请日期 |
2009.04.14 |
申请人 |
ZHENG YUANKAI;XI HAIWEN;DIMITROV DIMITAR V.;WANG DEXIN;SEAGATE TECHNOLOGY LLC |
发明人 |
ZHENG YUANKAI;XI HAIWEN;DIMITROV DIMITAR V.;WANG DEXIN |
分类号 |
G11C11/02 |
主分类号 |
G11C11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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