发明名称 |
Localized plasma processing |
摘要 |
A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching. |
申请公布号 |
US8087379(B2) |
申请公布日期 |
2012.01.03 |
申请号 |
US20050211176 |
申请日期 |
2005.08.24 |
申请人 |
CHANDLER CLIVE D.;SMITH NOEL;FEI COMPANY |
发明人 |
CHANDLER CLIVE D.;SMITH NOEL |
分类号 |
C23C16/452;C23C16/06;C23C16/22;C23C16/455;C23C16/507;C23C16/509;C23C16/517;C23F1/00;H01L21/306 |
主分类号 |
C23C16/452 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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