发明名称 |
Method for forming copper line having self-assembled monolayer for ULSI semiconductor devices |
摘要 |
A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles. The method includes the steps of forming an interlayer dielectric on a semiconductor substrate having a metal line forming region; forming a self-assembled monolayer on the metal line forming region; adsorbing catalytic particles on the self-assembled monolayer; forming using an electroless process a copper seed layer on the self-assembled monolayer having the catalytic particles adsorbed thereto; and forming a copper layer on the copper seed layer to fill in the metal line forming region. |
申请公布号 |
US8088687(B2) |
申请公布日期 |
2012.01.03 |
申请号 |
US20090491826 |
申请日期 |
2009.06.25 |
申请人 |
YEOM SEUNG JIN;KIM JAE HONG;KANG SUNG GOON;HAN WON KYU;HYNIX SEMICONDUCTOR INC.;IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
YEOM SEUNG JIN;KIM JAE HONG;KANG SUNG GOON;HAN WON KYU |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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