发明名称 |
Low decomposition storage of a tantalum precursor |
摘要 |
Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.
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申请公布号 |
US8088938(B2) |
申请公布日期 |
2012.01.03 |
申请号 |
US20080340888 |
申请日期 |
2008.12.22 |
申请人 |
STAFFORD NATHAN;DUSSARRAT CHRISTIAN;LETESSIER OLIVIER;LAXMAN RAVI K.;AIR LIQUIDE ELECTRONICS U.S. LP;AMERICAN AIR LIQUIDE, INC. |
发明人 |
STAFFORD NATHAN;DUSSARRAT CHRISTIAN;LETESSIER OLIVIER;LAXMAN RAVI K. |
分类号 |
C07F9/00;B01J19/00 |
主分类号 |
C07F9/00 |
代理机构 |
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代理人 |
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地址 |
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