发明名称 FABRICATION METHOD OF THE SEMICONDUCTOR APPARATUS
摘要 <p>It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.</p>
申请公布号 KR101101338(B1) 申请公布日期 2012.01.02
申请号 KR20107021492 申请日期 2003.10.10
申请人 发明人
分类号 G02F1/1333;H01L27/12;G02F1/1368;G09F9/00;G09F9/30;H01L21/02;H01L21/336;H01L21/77;H01L21/84;H01L27/32;H01L29/786;H01L51/00;H01L51/50;H01L51/52;H05B33/02;H05B33/04;H05B33/10;H05B33/14 主分类号 G02F1/1333
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