METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to control a crack in a semiconductor device by forming the crack suppress layer of a metal layer and the crack suppress layer of a resinous film. CONSTITUTION: A peeling layer(101) is formed on a first substrate(100). A first insulation layer(111) is formed on the peeling layer. A pixel circuit part(202) and a drive circuit part(201) are formed on the first insulation layer. A crack suppress layer(124) is made of a metal layer in the outside of the drive circuit part and pixel circuit part. A crack suppress area(205) is arranged with the crack suppress layer. A semiconductor device(203) is formed on the drive circuit part and the pixel circuit part.