NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A nonvolatile memory device is provided to prevent malfunctions due to a leakage current due to a precharge voltage by preventing the supply of a precharge voltage in a test operation. CONSTITUTION: In a nonvolatile memory device, a cell array(100) comprises a plurality of unit cells. A bit line sense amplifier(200) senses data which is stored in a plurality of unit cells. A bit line sense amplifier comprises a precharging unit and a test controller. The precharging unit precharges according to a precharge signal. A test signal is inputted, and a test controller stops the precharging operation when the test signal is inputted. The test controller performs a test operation.